The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Jun. 06, 2000
Volker Becker, Marxzell, DE;
Franz Laermer, Stuttgart, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method and a suitable device for carrying out this method is proposed, for etching a substrate (), especially a silicon element, with the aid of an inductively coupled plasma (). For this purpose, a high frequency electromagnetic alternating field is generated, which produces an inductively coupled plasma () from reactive particles in a reactor (). In this connection, the inductively coupled plasma () comes about by the action of the high frequency electromagnetic alternating field upon a reactive gas. Furthermore, a device, in particular a magnetic field coil () is provided which produces a static or timewise varying magnetic field between the substrate () and the ICP source (). For this, the magnetic field is oriented in such a way that its direction is at least approximately or predominantly parallel to the direction defined by the line connecting the substrate () and the inductively coupled plasma ().