The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2005

Filed:

Jun. 14, 2002
Applicants:

Akira Nakano, Miyagi-ken, JP;

Shintaro Asuke, Fujimi-machi, JP;

Takeshi Miyashita, Suwa, JP;

Tadahiro Ohmi, Sendai-shi, Miyagi-ken, JP;

Inventors:

Akira Nakano, Miyagi-ken, JP;

Shintaro Asuke, Fujimi-machi, JP;

Takeshi Miyashita, Suwa, JP;

Tadahiro Ohmi, Sendai-shi, Miyagi-ken, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H001/00 ; C23C016/00 ; C23F001/00 ;
U.S. Cl.
CPC ...
Abstract

A plasma processing unit has two electrodes for exciting a plasma, a plasma processing chamber, an RF generator, a matching circuit for performing impedance matching between the plasma processing chamber and the RF generator, a feeder that connects an output terminal of the matching circuit to one of the electrode, and a supplier that connects the RF generator to an input terminal of the matching circuit. The feeder is arranged to decrease the average density per unit volume of the RF power supplied from the RF generator as the RF power flows from the output terminal of the matching circuit to the electrode. The section of the plasma processing unit that is DC-grounded has a surface provided with a low-resistance portion. The supplier or the feeder is fixed on a floor using RF impedance adjustors so as to prevent the RF impedance therein from changing.


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