The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jul. 08, 2003
Masahito Numanami, Komoro, JP;
Hitoshi Akamine, Maebashi, JP;
Tsuyoshi Shibuya, Komoro, JP;
Tetsuaki Adachi, Chiisagata, JP;
Masatoshi Morikawa, Hannou, JP;
Yasuhiro Nunogawa, Takasaki, JP;
Masahito Numanami, Komoro, JP;
Hitoshi Akamine, Maebashi, JP;
Tsuyoshi Shibuya, Komoro, JP;
Tetsuaki Adachi, Chiisagata, JP;
Masatoshi Morikawa, Hannou, JP;
Yasuhiro Nunogawa, Takasaki, JP;
Renesas Technology Corp., Tokyo, JP;
Hitachi Tohbu Semiconductor, Ltd., Gunma, JP;
Abstract
A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).