The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Oct. 11, 2002
Seikoh Yoshida, Tokyo, JP;
Takahiro Wada, Tokyo, JP;
Hironari Takehara, Tokyo, JP;
The Furukawa Electric Co., LTD, Tokyo, JP;
Abstract
GaN-based FET has a sapphire substrate of about 50 nm thick on which an n-type GaN electron transit layer and an AlGaoN electron supply layer are formed, together with n-type GaN contact regions sandwiching the electron transit and supply layers therebetween. On the entire faces of these layer and regions is formed a polyimide interlayer insulating film of about 3000 nm thick that is formed with contact holes in which source, drain and gate electrodes are formed, each of which is comprised of a TaSi/Au layer and about 5000 nm in thickness. The source and drain electrodes are ohmic-connected to the n-type GaN contact regions and the gate electrode is in contact with an SiOgate insulating film.