The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2005

Filed:

Aug. 07, 2003
Applicants:

Hyeon-seag Kim, San Jose, CA (US);

Seung-hyun Rhee, Sunnyvale, CA (US);

Christine S Hau-riege, Fremont, CA (US);

Amit P Marathe, Milpitas, CA (US);

Inventors:

Hyeon-Seag Kim, San Jose, CA (US);

Seung-Hyun Rhee, Sunnyvale, CA (US);

Christine S Hau-Riege, Fremont, CA (US);

Amit P Marathe, Milpitas, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L023/58 ; H01L021/4763 ; G01K007/00 ; G01R001/04 ;
U.S. Cl.
CPC ...
Abstract

According to one exemplary embodiment, a test structure for determining electromigration and interlayer dielectric failure comprises a first metal line situated in a metal layer of the test structure. The test structure further comprises a second metal line situated adjacent and substantially parallel to the first metal line, where the second metal line is separated from the first metal line by a first distance, and where the first distance is substantially equal to minimum design rule separation distance. The test structure further comprises an interlayer dielectric layer situated between the first metal line and the second metal line. According to this exemplary embodiment, electromigration failure is determined when a first resistance of the first metal line or a second resistance of the second metal line is greater than a predetermined resistance, and interlayer dielectric failure is determined when a first current is detected between the first and second metal lines.


Find Patent Forward Citations

Kim, Hyeon-Seag. (2005). Test structure for determining electromigration and interlayer dielectric failure (U.S. Patent No. 6897476). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6897476

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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