The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jan. 15, 2004
Shin-yeu Tsai, Sinying, TW;
Po-hsiung Leu, Lujhu Township, Taoyuan County, TW;
Chia-ming Yang, Hsin-Chu, TW;
Tsang-yu Liu, Kaoshiong, TW;
Yun-da Fan, Hsinchu, TW;
Chen-peng Fan, Sinfong Township, Hsinchu County, TW;
Shin-Yeu Tsai, Sinying, TW;
Po-Hsiung Leu, Lujhu Township, Taoyuan County, TW;
Chia-Ming Yang, Hsin-Chu, TW;
Tsang-Yu Liu, Kaoshiong, TW;
Yun-Da Fan, Hsinchu, TW;
Chen-Peng Fan, Sinfong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of reducing copper hillocks in copper metallization is described. An opening is made through a dielectric layer overlying a substrate on a wafer. A copper layer is formed overlying the dielectric layer and completely filling the opening. The copper layer is polished back to leave the copper layer only within the opening. Copper hillocks are reduced by applying F ions to the copper layer to form a buffer zone on a surface of the copper layer and in-situ depositing a capping layer overlying the copper layer. The F ions remove copper oxide naturally formed on the copper surface and the buffer zone transfers thermal vertical strain in the copper to horizontal strain thereby preventing formation of copper hillocks.