The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jul. 28, 2003
Elgin Quek, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Pradeep R. Yelehanka, Singapore, SG;
Weining LI, Shanghai, CN;
Elgin Quek, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Pradeep R. Yelehanka, Singapore, SG;
Weining Li, Shanghai, CN;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a horizontal semiconductor fin on top of the semiconductor substrate. An access transistor gate and a thyristor gate are then formed on top of the semiconductor substrate and in contact with the horizontal semiconductor fin. An access transistor is formed from at least a portion of the horizontal semiconductor fin and the access transistor gate. A thyristor is formed from at least a portion of the horizontal semiconductor fin and the thyristor gate, the access transistor being in contact with the thyristor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile