The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Jan. 14, 2003
Sheunghee Park, Santa Clara, CA (US);
Sameer S. Haddad, San Jose, CA (US);
Chi Chang, Redwood City, CA (US);
Richard M. Fastow, Cupertino, CA (US);
Ming Sang Kwan, San Leandro, CA (US);
Zhigang Wang, Santa Clara, CA (US);
Sheunghee Park, Santa Clara, CA (US);
Sameer S. Haddad, San Jose, CA (US);
Chi Chang, Redwood City, CA (US);
Richard M. Fastow, Cupertino, CA (US);
Ming Sang Kwan, San Leandro, CA (US);
Zhigang Wang, Santa Clara, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A flash memory cell programming system and method that facilitate efficient and quick operation of a flash memory cell by providing a biasable well (e.g., substrate) is presented. The biasable well flash memory cell enables increases in electrical field strengths in a manner that eases resistance to charge penetration of a dielectric barrier (e.g., oxide) around a charge trapping region (e.g., a floating gate). The present biasable well system and method also create a self convergence point that increase control during programming operations and reduces the chances of excessive correction for over erased memory cells. The biasing can assist hard programming to store information and/or soft programming to correct the effects of over-erasing. The biasing can also reduce stress on a drain voltage pump, reduce leakage current and reduce programming durations. Some implementations also include a biasable control gate component, biasable source component and biasable drain component.