The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jul. 11, 2003
Yi-shing Chang, Hsin-Chu, TW;
Wen-ting Chu, Kao Hsiung, TW;
Yi-Shing Chang, Hsin-Chu, TW;
Wen-Ting Chu, Kao Hsiung, TW;
Abstract
A memory device and the method for manufacturing the same is disclosed. The device includes a first oxide layer on top of a substrate, a floating gate layer on top of the first oxide layer, and a second oxide layer over the floating gate layer. The second oxide layer and the floating gate layer have a first opening and a second opening respectively wherein the width of second opening is bigger than the width of the narrowest region of the first opening so that the floating gate layer is pulled back horizontally underneath the second oxide layer. A source region is in the substrate underneath the first oxide layer, and a third oxide layer fills in the first and second openings conforming to the contour thereof. The third oxide has a third opening to reach a portion of the source region. Further, a control gate material fills in the third opening.