The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jan. 09, 2002
Chin-kai Liu, Hsin-Chu, TW;
Jun-yean Chiou, Taichung, TW;
Pei-fen Chou, Hsin Chu, TW;
Han-shun Lui, Hsin Chu, TW;
Chin-Kai Liu, Hsin-Chu, TW;
Jun-Yean Chiou, Taichung, TW;
Pei-Fen Chou, Hsin Chu, TW;
Han-Shun Lui, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile