The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Apr. 09, 1999
Ka-ngo Leung, Hercules, CA (US);
William A. Barletta, Oakland, CA (US);
David O. Patterson, Annandale, VA (US);
Richard A. Gough, Kensington, CA (US);
Ka-Ngo Leung, Hercules, CA (US);
William A. Barletta, Oakland, CA (US);
David O. Patterson, Annandale, VA (US);
Richard A. Gough, Kensington, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.