The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
May. 30, 2002
Applicants:
Chi-hsing Yu, Hsin-Chu, TW;
Chih-yang Pai, Hsin-Chu, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8242 ;
U.S. Cl.
CPC ...
Abstract
Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.