The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
May. 05, 2003
Haruhiro Harry Goto, Saratoga, CA (US);
William R. Harshbarger, San Jose, CA (US);
Quanyuan Shang, Saratoga, CA (US);
Kam S. Law, Union City, CA (US);
Haruhiro Harry Goto, Saratoga, CA (US);
William R. Harshbarger, San Jose, CA (US);
Quanyuan Shang, Saratoga, CA (US);
Kam S. Law, Union City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF, CFand SF.