The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
May. 08, 2003
Shoichi Miyamoto, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device comprising an SOI substrate fabricated by forming a silicon layeron an insulating layer, a plurality of active regionshorizontally arranged in the silicon layer, and element isolating partshaving a trench-like shape which is made of an insulatorembedded between the active regionsin the silicon layer, wherein the insulating layerhas spacespositioned in the vicinity of interfaces between the active regions and the element isolating parts, whereby it becomes possible to reduce fixed charges or holes existing on a side of the insulating layer in interfaces between the silicon layer and the insulating layer, which fixed charges or holes are generated in a process of oxidation for forming the insulating layer on a bottom surface of the silicon layer.