The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2005

Filed:

Mar. 31, 2003
Applicants:

Der-shin Shyu, Hsinchu, TW;

Hung-cheng Sung, Hsin-chu, TW;

Chen-ming Huang, Jungli, TW;

Inventors:

Der-Shin Shyu, Hsinchu, TW;

Hung-Cheng Sung, Hsin-chu, TW;

Chen-Ming Huang, Jungli, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/788 ;
U.S. Cl.
CPC ...
Abstract

A memory cell including a substrate having a source region; a floating gate structure disposed over the substrate and associated with the source region; and a source coupling enhancement structure covering an exposed portion of the floating gate structure and extending to the source region. The flash memory cell can be fabricated in a method including the steps of forming the floating gate structure over a substrate; forming the source coupling enhancement structure on an exposed portion of the floating gate structure; and forming the source region in the substrate.


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