The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Jan. 17, 2003
Zhen-cheng Wu, Hsinchu, TW;
Lain-jong LI, Hua-Lien, TW;
Yung-chen LU, Taipei, TW;
Syun-ming Jang, Hsin-Chu, TW;
Zhen-Cheng Wu, Hsinchu, TW;
Lain-Jong Li, Hua-Lien, TW;
Yung-Chen Lu, Taipei, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming at least one barrierless, embedded metal structure comprising the following steps. A structure having a patterned dielectric layer formed thereover with at least one opening exposing at least one respective portion of the structure. Respective metal structures are formed within each respective opening. The first dielectric layer is removed to expose the top and at least a portion of the side walls of the respective at least one metal structure. A dielectric barrier layer is formed over the structure and the exposed top of the respective metal structure. A second, conformal dielectric layer is formed over the dielectric barrier layer to complete the respective barrierless at least one metal structure embedded within the second, conformal dielectric layer. The dielectric barrier layer preventing diffusion of the metal comprising the respective at least one metal structure into the second, conformal dielectric layer.