The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Mar. 11, 2003
Eiichi Asayama, Saga, JP;
Masataka Horai, Saga, JP;
Hiroki Murakami, Saga, JP;
Takayuki Kubo, Nishinomiya, JP;
Eiichi Asayama, Saga, JP;
Masataka Horai, Saga, JP;
Hiroki Murakami, Saga, JP;
Takayuki Kubo, Nishinomiya, JP;
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Abstract
There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×10atoms/cmor more, or with nitrogen doping at a concentration of 1×10atoms/cmand carbon doping at a concentration of 0.1×10-5×10atoms/cmand/or boron doping at a concentration of 1×10atoms/cmor more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.