The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Feb. 05, 2002
Michihiko Yanagisawa, Sagamihara, JP;
Tadayoshi Okuya, Yokohama, JP;
Michihiko Yanagisawa, Sagamihara, JP;
Tadayoshi Okuya, Yokohama, JP;
Speedfam Co., Ltd., Kanagawa-Pref., JP;
Abstract
To remove nanotopography (unevenness of wavelength: 0.2 mm through 20 mm, wave height: 1 through several hundreds nm) which has already been produced on a surface of a semiconductor wafer which has been regarded as impossible to remove conventionally, a half value width of an etching profile of activated species gas is set to fall in a range equal to or smaller than a wavelength a of nanotopography and equal to or larger than a half thereof. Based on previously measured data of nanotopography, moving speed and locus of injected activated species gas along a surface of a semiconductor wafer are calculated and controlled.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile