The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Dec. 22, 2003
Applicants:
Masanori Akatsuka, Tokyo, JP;
Naoshi Adachi, Tokyo, JP;
Inventors:
Masanori Akatsuka, Tokyo, JP;
Naoshi Adachi, Tokyo, JP;
Assignee:
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/00 ; H01L021/84 ;
U.S. Cl.
CPC ...
Abstract
An SOI substrate having a partial SOI structure in which a buried insulating film having a predetermined area is formed via an active layer in a part of a silicon single crystal substrate in plan view by ion-implanting elements to the part of the substrate and then applying thereto a thermal processing, wherein a thickness of a peripheral edge portion of said buried insulating film is getting thinner toward a terminal edge of said buried insulating film.