The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Dec. 16, 2002
Hiroshi Inaba, Yokohama, JP;
Shinji Sasaki, Yokohama, JP;
Shinya Hirano, Yokohama, JP;
Kenji Furusawa, Hiratsuka, JP;
Minoru Yamasaka, Chigasaki, JP;
Atsushi Amatatsu, Naka, JP;
Shi Xu, Singapore, SG;
Hiroshi Inaba, Yokohama, JP;
Shinji Sasaki, Yokohama, JP;
Shinya Hirano, Yokohama, JP;
Kenji Furusawa, Hiratsuka, JP;
Minoru Yamasaka, Chigasaki, JP;
Atsushi Amatatsu, Naka, JP;
Shi Xu, Singapore, SG;
Hitachi, Ltd., Tokyo, JP;
Nanofilm Technologies International PTE, Ltd., Singapore (SG), unknown;
Abstract
A plasma processing device include a plasma generation unit for generating plasma by using a cathodic arc discharge, first and second magnetic field ducts arranged in a row for transporting the plasma with one end of the row being connected to the plasma generation unit and a processing chamber connected to the other end of the row unit and having a stage for holding a substrate to be processed. A shutter is provided for covering the plasma during a period of a predetermined time after start of arc discharge or during a period of predetermined time before end of arc discharge. The shutter is disposed between the first magnetic field duct and the substrate to be processed, and is movable. The shutter is capable of being supplied with a voltage, and is kept in a state so as to be electrically insulated from the processing chamber.