The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Mar. 20, 2002
Atsushi Moriya, Tokyo, JP;
Yasuhiro Inokuchi, Tokyo, JP;
Takaaki Noda, Tokyo, JP;
Yasuo Kunii, Tokyo, JP;
Atsushi Moriya, Tokyo, JP;
Yasuhiro Inokuchi, Tokyo, JP;
Takaaki Noda, Tokyo, JP;
Yasuo Kunii, Tokyo, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A semiconductor device fabricating method includes the step of supplying BClas a doping gas, SiHas a film forming gas, and Has a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH, BCland Hflow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700° C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile