The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Dec. 05, 2001
Kazuo Inoue, Tokyo, JP;
Hisao Igarashi, Tokyo, JP;
Kazuo Inoue, Tokyo, JP;
Hisao Igarashi, Tokyo, JP;
JSR Corporation, Tokyo, JP;
Abstract
Disclosed herein are a wafer inspection apparatus which is small in size, prevented from shortening the service life of its circuit board for inspection, can collectively perform inspection as to a great number of electrodes to be inspected, has good electrical properties and can perform electrical inspection of high functional integrated circuits, and an anisotropically conductive sheet suitable for use in this wafer inspection apparatus. The anisotropically conductive sheet is composed of an insulating sheet body, in which a through-hole has been formed, and an elastic anisotropically conductive film arranged in the through-hole. The insulating sheet body is formed of a material having a modulus of elasticity of 1×10to 1×10Pa, a coefficient of linear thermal expansion of 3×10to 3×10Kand a saturation magnetization lower than 0.1 wb/m, the elastic anisotropically conductive film is composed of a plurality of conductive path-forming portions and insulating portions formed among these conductive path-forming portions, the conductive path-forming portions are obtained by filling conductive particles having a number average particle diameter of 30 to 150 μm, a coating layer composed of a noble metal and having a thickness of at least 20 nm is formed on surfaces of the conductive particles, each of the conductive path-forming portions has a durometer hardness of 15 to 45, and an electric resistance between conductive path-forming portions is at least 10 MΩ.