The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Nov. 21, 2002
Naoki Kumagai, Nagano, JP;
Yuuichi Harada, Nagano, JP;
Shinichi Jimbo, Nagano, JP;
Yoshihiro Ikura, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Kazuhiko Yoshida, Nagano, JP;
Naoki Kumagai, Nagano, JP;
Yuuichi Harada, Nagano, JP;
Shinichi Jimbo, Nagano, JP;
Yoshihiro Ikura, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Kazuhiko Yoshida, Nagano, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A semiconductor device is configured to prevent destruction of elements and/or miss-operation of the circuit by parasitic effects produced by parasitic transistors when a MOSFET of a bridge circuit is formed on a single chip. A Schottky junction is formed by providing an anode electrode in an n well region where a source region, a drain region, and a p well region of a lateral MOSFET. A Schottky barrier diode constituting a majority carrier device is connected in parallel with a PN junction capable of being forward-biased so that the PN junction is not forward-biased so that minority carriers are not generated, and thereby suppressing parasitic effects.