Pinch-off type vertical junction field effect transistor and method of manufacturing the same

Abstract

A junction field effect transistor (JFET) is provided that is capable of a high voltage resistance, high current switching operation, that operates with a low loss, and that has little variation. This JFET is provided with a gate region () of a second conductivity type provided on a surface of a semiconductor substrate, a source region () of a first conductivity type, a channel region () of the first conductivity type that adjoins the source region, a confining region () of the second conductivity type that adjoins the gate region and confines the channel region, a drain region () of the first conductivity type provided on a reverse face, and a drift region () of the first conductivity type that continuously lies in a direction of thickness of the substrate from a channel to a drain. A concentration of an impurity of the first conductivity type in the drift region and the channel region is lower than a concentration of an impurity of the first conductivity type in the source region and the drain region and a concentration of an impurity of the second conductivity type in the confining region.