The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
May. 29, 2003
Applicants:
Yu-sin Yang, Seoul, KR;
Sang-mun Chon, Yongin-si, KR;
Sun-yong Choi, Seongnam-si, KR;
Chung Sam Jun, Suwon-si, KR;
Kwan-woo Ryu, Suwon-si, KR;
Park-song Kim, Gwangju-si, KR;
Tae-min Eom, Seongnam-si, KR;
Inventors:
Yu-Sin Yang, Seoul, KR;
Sang-Mun Chon, Yongin-si, KR;
Sun-Yong Choi, Seongnam-si, KR;
Chung Sam Jun, Suwon-si, KR;
Kwan-Woo Ryu, Suwon-si, KR;
Park-Song Kim, Gwangju-si, KR;
Tae-Min Eom, Seongnam-si, KR;
Assignee:
Samsung Electrics, Co., LTD, Kyungki-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K011/00 ;
U.S. Cl.
CPC ...
Abstract
A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.