The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
May. 06, 2002
Yutaka Ohmoto, Hikari, JP;
Hironobu Kawahara, Kudamatsu, JP;
Ken Yoshioka, Hikari, JP;
Kazue Takahashi, Kudamatsu, JP;
Saburou Kanai, Hikari, JP;
Yutaka Ohmoto, Hikari, JP;
Hironobu Kawahara, Kudamatsu, JP;
Ken Yoshioka, Hikari, JP;
Kazue Takahashi, Kudamatsu, JP;
Saburou Kanai, Hikari, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.