The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Apr. 19, 2002
Via bottom copper/barrier interface improvement to resolve via electromigration and stress migration
Tien I Bao, Hsin-Chu, TW;
Syun-ming Jang, Hsin-Chu, TW;
Tien I Bao, Hsin-Chu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a copper/barrier layer interface comprising the following sequential steps. A structure having a lower copper layer formed thereover is provide. A patterned dielectric layer is formed over the lower copper layer. The patterned dielectric layer having an opening exposing a portion of the lower copper layer. The exposed portion of the lower copper layer is converted to a copper silicide portion. A barrier layer is formed upon the patterned dielectric layer and the copper silicide portion, lining the opening, whereby the lower copper layer/barrier layer interface is formed such that the barrier layer contacts the copper silicide portion to form an interface.