The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
May. 28, 2002
Hung-dar Wang, Kaohsiung, TW;
Ruey-shing Huang, Putz, TW;
Shih-chin Gong, Taipei, TW;
Chung-yang Tseng, Taipei, TW;
Hung-Dar Wang, Kaohsiung, TW;
Ruey-Shing Huang, Putz, TW;
Shih-Chin Gong, Taipei, TW;
Chung-Yang Tseng, Taipei, TW;
Asia Pacific Microsystems, Inc., Hsinchu, TW;
Abstract
A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer is polished with a polisher; thus a wafer with desired thickness can be obtained after the polish is proceeded; the thickness of the upper wafer is determined by the said inspection patterns, then the wafer is sorted by thickness; thus it can be applied to the MEMS micromachined devices that in need of the wafer with such precise thickness.