The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Aug. 12, 2002
Zhigang Wang, Santa Clara, CA (US);
Nian Yang, San Jose, CA (US);
Xin Guo, Mountain View, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for detecting tunnel oxide encroachment on a memory device. In one method embodiment, the present invention applies a baseline voltage burst to a gate of the memory device. Next, the present embodiment generates a baseline performance distribution graph of bit line current as a function of gate voltage for the memory device. The present embodiment then applies a channel program voltage burst to the gate of the memory device. Moreover, the present embodiment generates a channel program performance distribution graph of bit line current as a function of gate voltage for the memory device. The present embodiment then applies a channel erase voltage burst to the gate of the memory device. Additionally, the present embodiment generates a channel erase performance distribution graph of bit line current as a function of gate voltage for the memory device. A comparison of the channel program performance distribution graph and the channel erase performance distribution graph with respect to said baseline performance distribution graph is then performed. In so doing, an asymmetric distribution of the channel program performance distribution graph and the channel erase performance distribution graph with respect to the baseline performance distribution indicates tunnel oxide encroachment.