The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2005

Filed:

May. 20, 2003
Applicants:

Katsuhiro Ota, Yokohama, JP;

Noriyo Tomiyama, Hidaka, JP;

Teruhisa Ichise, Hachioji, JP;

Inventors:

Katsuhiro Ota, Yokohama, JP;

Noriyo Tomiyama, Hidaka, JP;

Teruhisa Ichise, Hachioji, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ; H01L021/461 ;
U.S. Cl.
CPC ...
Abstract

In order to prevent dusting from a peripheral end portion of a wafer, a semiconductor film formed is removed from at least the entire surface of the backside of the wafer and from the peripheral portion of the wafer by etching at a high etching rate relative to an insulating film present beneath the semiconductor film, to realize a semiconductor apparatus in which the semiconductor film is formed in an integrated circuit pattern region on the face side of the wafer. Thus, the problem of dusting from the peripheral portion of the wafer is obviated, and a semiconductor apparatus with high reliability is realized.


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