The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2005

Filed:

May. 15, 2002
Applicants:

Sergey D. Lopatin, Santa Clara, CA (US);

Paul R. Besser, Sunnyvale, CA (US);

Matthew S. Buynoski, Palo Alto, CA (US);

Pin-chin Connie Wang, Menlo Park, CA (US);

Inventors:

Sergey D. Lopatin, Santa Clara, CA (US);

Paul R. Besser, Sunnyvale, CA (US);

Matthew S. Buynoski, Palo Alto, CA (US);

Pin-Chin Connie Wang, Menlo Park, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract

A method of fabricating an integrated circuit can include forming a barrier material layer along lateral side walls and a bottom of a via aperture which is configured to receive a via material that electrically connects a first conductive layer and a second conductive layer, implanting a first alloy element into an interfacial layer over the barrier material layer, depositing an alloy layer over the interfacial layer. The implanted first alloy element is reactive with the barrier material layer to increase resistance to copper diffusion.


Find Patent Forward Citations

Loading…