The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2005
Filed:
Jun. 15, 2001
Alexander Kalnitsky, Portland, OR (US);
Michael Rowlandson, Portland, OR (US);
Ken Liao, Beaverton, OR (US);
Robert F. Scheer, Portland, OR (US);
Alexander Kalnitsky, Portland, OR (US);
Michael Rowlandson, Portland, OR (US);
Ken Liao, Beaverton, OR (US);
Robert F. Scheer, Portland, OR (US);
Maxim Integrated Products, Inc., Sunnyvale, CA (US);
Abstract
The present invention provides a method of forming a super self-aligned bipolar transistor with enhanced electrical characteristics. The power gain and frequency response of the transistor are improved by horizontally etching an area for the base region that is wider than the active emitter and collector regions. By removing polysilicon layers within the device, the base region resistance goes down and unwanted capacitive effects are reduced.