The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2005

Filed:

May. 22, 2002
Applicants:

Hsin-chang Wu, Taipei, TW;

Cheng-yuan Tsai, Yun-Lin Hsien, TW;

Yu-wen Fang, Taipei, TW;

Neng-hui Yang, Hsin-Chu, TW;

Inventors:

Hsin-Chang Wu, Taipei, TW;

Cheng-Yuan Tsai, Yun-Lin Hsien, TW;

Yu-Wen Fang, Taipei, TW;

Neng-Hui Yang, Hsin-Chu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D003/06 ; H05H001/46 ; C23C014/10 ; C23C014/14 ; H01L021/306 ; H01L021/473 ;
U.S. Cl.
CPC ...
Abstract

A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided. The silicon nitride film is then exposed to oxygen-containing plasma such as ozone plasma. A thick BSG film is then deposited onto the treated surface of the silicon nitride film. By pre-treating the silicon nitride film with ozone plasma for about 60 seconds, an increase of near 50% of Kapp of the BSG film is obtained.


Find Patent Forward Citations

Loading…