The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Aug. 09, 2002
Tsuyoshi Tamaru, Hachioji, JP;
Kazutoshi Oomori, Ome, JP;
Noriko Miura, Ome, JP;
Hideo Aoki, Musashimurayama, JP;
Takayuki Oshima, Ome, JP;
Tsuyoshi Tamaru, Hachioji, JP;
Kazutoshi Oomori, Ome, JP;
Noriko Miura, Ome, JP;
Hideo Aoki, Musashimurayama, JP;
Takayuki Oshima, Ome, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor integrated circuit device has a semiconductor substrate, an interlayer insulating film including SiOF films formed on a main surface of the semiconductor substrate, a wiring groove formed by dry etching of the interlayer insulating film, and a Cu wiring buried in the wiring groove by a Damascene method, wherein a silicon oxynitride film is provided between a silicon nitride film serving as an etching stopper layer for the dry etching and the SiOF film, so that free F generated in the SiOF film is trapped with the silicon oxynitride film.