The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Feb. 02, 2004
Applicants:
Qi Xiang, San Jose, CA (US);
James N. Pan, Fishkill, NY (US);
Ming Ren Lin, Cupertino, CA (US);
Inventors:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H11L029/76 ;
U.S. Cl.
CPC ...
Abstract
A method of manufacturing an integrated circuit with a strained semiconductor channel region. The method can provide a double gate structure. The gate structure can be provided in and above a trench. The trench can be formed in a compound semiconductor material such as a silicon-germanium material. The strained semiconductor can increase the charge mobility associated with the transistor. A silicon-on-insulator substrate can be used.