The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2005

Filed:

Feb. 21, 2002
Applicants:

Hajime Nagano, Yokohama, JP;

Shinichi Nitta, Yokohama, JP;

Hisato Oyamatsu, Yokohama, JP;

Inventors:

Hajime Nagano, Yokohama, JP;

Shinichi Nitta, Yokohama, JP;

Hisato Oyamatsu, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L027/108 ; H01L029/76 ; H01L029/94 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a first semiconductor layer formed above a first region of a supporting substrate with a buried oxide layer disposed therebetween and a second semiconductor layer formed on a second region of the supporting substrate. An interface between the supporting substrate and the second semiconductor layer is placed in a position deeper than the buried oxide layer.


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