The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Mar. 24, 2003
Hans Peter Mikelson, Eau Claire, WI (US);
Michael Paul Fleischer, Eau Claire, WI (US);
Gloria Marie Lee, Cadott, WI (US);
Jason Christopherson, Chippewa Falls, WI (US);
Hans Peter Mikelson, Eau Claire, WI (US);
Michael Paul Fleischer, Eau Claire, WI (US);
Gloria Marie Lee, Cadott, WI (US);
Jason Christopherson, Chippewa Falls, WI (US);
Union Semiconductor Technology Corporation, Plymouth, MN (US);
Abstract
A method processes a thick TiW metal layer () on a dielectric layer (), where the dielectric layer () has been deposited on a substrate (), such as a silicon substrate. The method deposits the TiW metal layer () onto the dielectric layer (), such as silicon dioxide or silicon nitride, and then deposits a photoresist () over the TiW metal layer (). The method removes substantially all of the TiW metal layer () not in contact with the photoresist () with a uniform etch, such as not more than 80% to 90% of the deposited TiW metal layer. Then, the TiW metal layer () is selectively etched to the dielectric layer (), to remove the TiW metal layer () faster than the dielectric layer (), such as 2.7 times faster.