The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Aug. 27, 2002
Harry Chuang, Austin, TX (US);
Victor C. Y. Chang, Tucheng, TW;
Yung-shun Chen, Hsin-Chu, TW;
Shang Y. Hou, Hsinchu, TW;
Harry Chuang, Austin, TX (US);
Victor C. Y. Chang, Tucheng, TW;
Yung-Shun Chen, Hsin-Chu, TW;
Shang Y. Hou, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Abstract
A new method to determine a parameter of a damascene interconnect in an integrated circuit device is achieved. Drawn dimensions and local pattern density of a damascene interconnect are extracted in an integrated circuit device. A parameter of the damascene interconnect is calculating using the drawn dimensions and the local pattern density to select a per unit value from a set of per unit values measured over a range of drawn dimension and pattern density combinations. The method may be used to improve the accuracy of extracted damascene metal line resistance and parasitic capacitance.