The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Nov. 12, 2002
Yoshikazu Tsunemine, Tokyo, JP;
Yoshikazu Tsunemine, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device in which an electrode is not allowed to easily deform even when a heat treatment is performed on a material forming the electrode during a damascene process for forming a stacked capacitor, and a manufacturing method thereof are provided. A conductive filmmade of the same material as that of a capacitor lower electrodeis formed so as to be adhered to a top face of a conductive filmby a heat treatment. If the lower electrodeis made of a noble metal such as ruthenium, for example, the conductive filmis made of the same noble metal. Because of use of the same material for forming the conductive filmand the lower electrode, connection between the conductive filmand the lower electrodeis strengthened. Accordingly, it is easy to maintain connection between the conductive filmand the lower electrodeduring a heat treatment on the lower electrode, so that the lower electrode is not likely to deform. For this reason, connection between the conductive plugand the lower electrodecan be made more reliable than a structure in which the lower electrodeis connected directly to the conductive plug
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile