The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
May. 01, 2003
Chit Hwei NG, Singapore, SG;
Lap Chan, Singapore, SG;
Purakh Verma, Singapore, SG;
Yelehanka Ramachandramurthy Pradeep, Singapore, SG;
Sanford Chu, Singapore, SG;
Chit Hwei Ng, Singapore, SG;
Lap Chan, Singapore, SG;
Purakh Verma, Singapore, SG;
Yelehanka Ramachandramurthy Pradeep, Singapore, SG;
Sanford Chu, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method is described to fabricate RF inductor devices on a silicon substrate. Low-k or other dielectric material is deposited and patterned to form inductor lower plate trenches. Trenches are lined with barrier film such as TaN, filled with copper, and excess metal planarized using chemical mechanical polishing (CMP). Second layer of a dielectric material is deposited and patterned to form via-hole/trenches. Via-hole/trench patterns are filled with barrier material, and the dielectric film in between the via-hole/trenches is etched to form a second set of trenches. These trenches are filled with copper and planarized. A third layer of a dielectric film is deposited and patterned to form via-hole/trenches. Via-hole/trenches are then filled with barrier material, and the dielectric film between via-hole/trench patterns etched to form a third set of trenches. These trenches are filled with copper metal and excess metal removed by CMP to form said RF inductor.