The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Oct. 17, 2002
Applicants:
Chu-sheng Lee, Tainan, TW;
Tou-yu Chen, Tainan, TW;
Inventors:
Chu-Sheng Lee, Tainan, TW;
Tou-Yu Chen, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., LTD, Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C025/68 ;
U.S. Cl.
CPC ...
Abstract
The removal of defect particles that may be created during polysilicon hard mask etching, and that are embedded within the polysilicon layer, is disclosed. Oxide is first grown in the polysilicon layer exposed through the patterned hard mask layer, so that the defect particle becomes embedded within the oxide. Oxide growth may be accomplished by rapid thermal oxidation (RTO). The oxide is then exposed to an acidic solution, such as hydrofluoric (HF) acid, to remove the oxide and the embedded defect particle embedded therein.