The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jul. 03, 2000
Pascale Motte, Grenoble, FR;
Joaquim Torres, Vinoux, FR;
Brigitte Descouts, Meylan, FR;
Jean Palleau, Theys, FR;
Pascale Motte, Grenoble, FR;
Joaquim Torres, Vinoux, FR;
Brigitte Descouts, Meylan, FR;
Jean Palleau, Theys, FR;
Commissariat a l'Energie Atomique, Paris, FR;
STMicroelectronics SA, Gentilly, FR;
Abstract
A method for depositing a dielectric material on copper apparent on the surface of a structure, by placing the structure in a depositing chamber of CVD type (Chemical Vapor Deposition), adding to the chamber a first gas forming a precursor for the formation of the dielectric material and containing an element able to contaminate copper, adding to the chamber a second gas containing a chemical element intended, together with the element contained in the first gas and able to contaminate copper, to form said dielectric material, the second gas being able to react with the first gas to give the deposit of dielectric material, performing the deposit of dielectric material from the first gas and the second gas, characterized in that the method comprises a step for adding a third gas able to prevent the contamination of copper by said element contained in the first gas.