The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2005

Filed:

May. 15, 2001
Applicants:

Kevin P. Martin, Atlanta, GA (US);

Harry P. Gillis, Los Angeles, CA (US);

Dmitri A. Choutov, Santa Clara, CA (US);

Inventors:

Kevin P. Martin, Atlanta, GA (US);

Harry P. Gillis, Los Angeles, CA (US);

Dmitri A. Choutov, Santa Clara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H001/00 ; C23C016/00 ; C03C015/00 ;
U.S. Cl.
CPC ...
Abstract

An apparatus for low-damage, anisotropic etching of substrates having the substrate mounted upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.


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