The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jun. 27, 2002
Applicants:
Ping-yi Chang, Kaohsiung, TW;
Pei-ren Jeng, Hsinchu, TW;
Inventors:
Ping-Yi Chang, Kaohsiung, TW;
Pei-Ren Jeng, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 218247 ;
U.S. Cl.
CPC ...
Abstract
A method for fabricating a flash memory is described. A stacked gate structure and a source/drain are formed on a substrate. An inter-layer dielectrics and a plurality of inter-metal dielectric layers are then formed over the substrate, wherein at least one layer among the inter-layer dielectrics and the inter-metal dielectric layers has a silicon carbide layer formed thereon. The silicon carbide layer is formed to protect the memory device from an UV irradiation, so as to prevent data errors occurring in the memory device.