The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
May. 27, 2003
William J. Taylor, Jr., Round Rock, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Steven G. H. Anderson, Austin, TX (US);
William J. Taylor, Jr., Round Rock, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Steven G. H. Anderson, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of forming a conductive structure having a length that is less than the length define by photolithographic patterning. A silicon layer () is formed in a MeOx dielectric layer () is photolithographically patterned to a predetermined first length. A metal layer () is formed conformally to at least the sidewalls of the silicon layer and then is reacted with the silicon to form a metal silicide (). In particular, metal silicide abutments () are formed contiguous to sidewalls () of a reduced conductor (). The remaining metal layer and the metal silicide are etched away, resulting in a conductor having predetermined second length that is less than the predetermined first length.