The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Nov. 21, 2002
Tetsuya Yamada, Tokyo, JP;
Atsushi Ueno, Tokyo, JP;
Kouichirou Tsujita, Tokyo, JP;
Atsumi Yamaguchi, Tokyo, JP;
Takashi Okagawa, Tokyo, JP;
Tetsuya Yamada, Tokyo, JP;
Atsushi Ueno, Tokyo, JP;
Kouichirou Tsujita, Tokyo, JP;
Atsumi Yamaguchi, Tokyo, JP;
Takashi Okagawa, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The reduction of length of a gate electrode is suppressed in the process of thinning it. A hard mask () is thinned and used to etch a gate electrode material film () to form a gate electrode. At this time, a resist mask () having an opening () over an active region () is formed; the resist mask () covers at least both ends in the length direction of the hard mask () and exposes in the opening () at least the entirety of the part of the hard mask () which lies right above the active region (). The hard mask () is thinned by etching using the resist mask () as a mask and therefore the hard mask () is thinned in the part over the active region () without being shortened in the length direction. As a result, the gate electrode formed by using the thinned hard mask () is not shortened in length.