The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Jun. 27, 2002
Vahid Vahedi, Albany, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Albert Ellingboe, Dublin, IE;
Andras Kuthi, Thousand Oaks, CA (US);
Andreas Fischer, Castro Valley, CA (US);
Vahid Vahedi, Albany, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Albert Ellingboe, Dublin, IE;
Andras Kuthi, Thousand Oaks, CA (US);
Andreas Fischer, Castro Valley, CA (US);
Lam Research Corp., Fremont, CA (US);
Abstract
A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.