The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Sep. 06, 2002
Kojiro Yuzuriha, Hyogo, JP;
Shu Shimizu, Hyogo, JP;
Tamotsu Tanaka, Hyogo, JP;
Takashi Yano, Hyogo, JP;
Kojiro Yuzuriha, Hyogo, JP;
Shu Shimizu, Hyogo, JP;
Tamotsu Tanaka, Hyogo, JP;
Takashi Yano, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Ryoden Semiconductor System Engineering Corporation, Hyogo, JP;
Abstract
A semiconductor manufacturing method is mainly contemplated, improved to prevent an altered surface layer of a resist from being removed when a single patterned resist is used to provide dry-etch and wet-etch successively. On a semiconductor substrate an insulation film and a conductive layer are formed successively. On the conductive layer a patterned resist is formed. With the patterned resist used as a mask, the conductive layer is dry-etched. A surface layer of the patterned resist is partially removed. With the patterned resist used as a mask, the insulation film is wet-etched.