The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Feb. 12, 2001
Helen H. Zhu, Fremont, CA (US);
James R. Bowers, Brookfield, CT (US);
Ian J. Morey, Singapore, SG;
Wayne Babie, Poughkeepsie, NY (US);
Michael Goss, Mendon, MA (US);
Helen H. Zhu, Fremont, CA (US);
James R. Bowers, Brookfield, CT (US);
Ian J. Morey, Singapore, SG;
Wayne Babie, Poughkeepsie, NY (US);
Michael Goss, Mendon, MA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.