The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Dec. 17, 2002
Kevin Fairbairn, Los Gatos, CA (US);
Michael Rice, Pleasanton, CA (US);
Timothy Weidman, Sunnyvale, CA (US);
Christopher S Ngai, Burlingame, CA (US);
Ian Scot Latchford, Sunnyvale, CA (US);
Christopher Dennis Bencher, Sunnyvale, CA (US);
Yuxiang May Wang, San Jose, CA (US);
Kevin Fairbairn, Los Gatos, CA (US);
Michael Rice, Pleasanton, CA (US);
Timothy Weidman, Sunnyvale, CA (US);
Christopher S Ngai, Burlingame, CA (US);
Ian Scot Latchford, Sunnyvale, CA (US);
Christopher Dennis Bencher, Sunnyvale, CA (US);
Yuxiang May Wang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.